Calculation and analysis of lattice thermal conductivity in tungsten by molecular dynamics

被引:43
作者
Fu, Baoqin [1 ]
Lai, Wensheng [1 ]
Yuan, Yue [1 ]
Xu, Haiyan [1 ]
Liu, Wei [1 ]
机构
[1] Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
关键词
SIMULATION; IRRADIATION; METALS; ENERGY; MOLYBDENUM; NANOSCALE; NANOWIRES; STABILITY; TANTALUM; DIVERTOR;
D O I
10.1016/j.jnucmat.2012.05.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tungsten (W) has been used for plasma facing materials (PFMs) of tokamak. Under severe work condition, the irradiation damage of W is closely related to its thermal conduction, which has been researched systematically in this paper with molecular dynamics (MD). The thermal conductivities (TCs) by phonons with many different conditions, such as different temperatures, different heat flows, different crystallographic orientation and the presence of grain boundary (GB) have been calculated and discussed in detail. The finite size effect has been taken into account in the calculation of TCs, the relationship between the inverse of TC and the inverse of lateral dimension is linear. Research shows that the TCs are not depended strongly on heat flux, but they decrease gradually with the increase of temperature. We also find the thermal conduction of W is to some extent anisotropic, but the variations are smaller than that caused by temperature. A sharp discontinuity in temperature appears across the GB in the temperature-x profile. And the TC in the grain boundary phase region is less than one-tenth of the TC of bulk at 300 K. However, the GB effect on TC of W polycrystalline sample is relatively small. These research results can help to account for the damage mechanisms of plasma facing material tungsten. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:268 / 273
页数:6
相关论文
共 50 条
  • [21] Molecular dynamics calculations of InSb nanowires thermal conductivity
    Cardozo, Giovano de Oliveira
    Rino, Jose Pedro
    JOURNAL OF MATERIALS SCIENCE, 2011, 46 (03) : 629 - 633
  • [22] Mechanism of thermal conductivity suppression in doped silicon studied with nonequilibrium molecular dynamics
    Lee, Yongjin
    Hwang, Gyeong S.
    PHYSICAL REVIEW B, 2012, 86 (07)
  • [23] Molecular dynamics study of influence of vacancy types defects on thermal conductivity of β-SiC
    Samolyuk, G. D.
    Golubov, S. I.
    Osetsky, Y. N.
    Stoller, R. E.
    JOURNAL OF NUCLEAR MATERIALS, 2011, 418 (1-3) : 174 - 181
  • [24] Thermal conductivity of strained silicon: Molecular dynamics insight and kinetic theory approach
    Kuryliuk, Vasyl
    Nepochatyi, Oleksii
    Chantrenne, Patrice
    Lacroix, David
    Isaiev, Mykola
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (05)
  • [25] Calculation of the thermal conductivity of human serum albumin (HSA) with equilibrium/non-equilibrium molecular dynamics approaches
    Ashkezari, Abbas Zarenezhad
    Jolfaei, Nitasha Adavoodi
    Jolfaei, Niyusha Adavoodi
    Hekmatifar, Maboud
    Toghraie, Davood
    Sabetvand, Roozbeh
    Rostami, Sara
    COMPUTER METHODS AND PROGRAMS IN BIOMEDICINE, 2020, 188
  • [26] Molecular dynamics studies on the thermal conductivity of single-walled carbon nanotubes
    Guo, Zhi-xin
    Gong, Xin-gao
    FRONTIERS OF PHYSICS IN CHINA, 2009, 4 (03): : 389 - 392
  • [27] Molecular dynamics study of thermal conductivity of carbon nanotubes and silicon carbide nanotubes
    Qin Cheng-Long
    Luo Xiang-Yan
    Xie Quan
    Wu Qiao-Dan
    ACTA PHYSICA SINICA, 2022, 71 (03)
  • [28] Fragility under shocking: molecular dynamics insights into defect evolutions in tungsten lattice
    Wang, Peng-Jie
    Cao, Qiang
    Liu, Sheng
    Peng, Qing
    TUNGSTEN, 2021, 3 (02) : 234 - 242
  • [29] Molecular dynamics prediction of thermal conductivity of GaN films and wires at realistic length scales
    Zhou, X. W.
    Jones, R. E.
    Aubry, S.
    PHYSICAL REVIEW B, 2010, 81 (15)
  • [30] Thermal Conductivity of Silicene Nanoribbons: An Equilibrium Molecular Dynamics Study
    Jahan, Nusrat
    Navid, Ishtiaque Ahmed
    Subrina, Samia
    2018 4TH IEEE INTERNATIONAL WIE CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (IEEE WIECON-ECE 2018), 2018, : 121 - 124