Origin of electric dipoles formed at high-k/SiO2 interface

被引：304

作者：

Kita, Koji ^{[1
]}

Toriumi, Akira ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 13期

关键词：

bonds (chemical); CMOS integrated circuits; electric moments; electronegativity; high-k dielectric thin films; semiconductor-insulator boundaries; silicon compounds;

D O I：

10.1063/1.3110968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model for the physical origin of the dipole formed at high-k/SiO2 interface is proposed. In our model, an areal density difference of oxygen atoms at high-k/SiO2 interface is considered as an intrinsic origin of the dipole formation. The oxygen movement from higher-oxygen-density side to a lower-oxygen-density one will determine the direction of interface dipole. The bonding energy relaxation at the interface explains why the oxygen density difference is the driving force of the oxygen movement. Our model enables the prediction of the dipole directions for candidate gate dielectrics, including those so far not reported.

引用

页数：3

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