Selective growth of diamond and carbon nanostructures by hot filament chemical vapor deposition

被引：22

作者：

Yang, Q ^{[1
]}

Xiao, C ^{[1
]}

Chen, W ^{[1
]}

Hirose, A ^{[1
]}

机构：

[1] Univ Saskatchewan, Plasma Phys Lab, Saskatoon, SK S7N 5E2, Canada

来源：

基金：

加拿大自然科学与工程研究理事会;

关键词：

diamond films; nanotubes; hot filament CVD; nanocones; selective growth;

D O I：

10.1016/j.diamond.2003.11.076

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond and carbon nanostructures have been synthesized selectively on differently pretreated silicon substrates by hot filament chemical vapor deposition in a CH4/H-2 gas mixture. Under typical conditions for CVD diamond deposition, carbon nanotube and diamond films have been selectively grown on nickel coated and diamond powder scratched silicon surface, respectively. By initiating a DC glow discharge between the filament and the substrate holder (cathode), well aligned carbon nanotube and nanocone films have been selectively synthesized on nickel coated and uncoated silicon substrates, respectively. By patterning, the nickel film on silicon substrate, pattern growth of diamond and nanotubes has been successfully achieved. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：433 / 437

页数：5

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