Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips

被引：6
作者：
Han, Dan [1 ,2 ]
Ma, Shufang [3 ]
Jia, Zhigang [1 ,2 ]
Liu, Peizhi [1 ,2 ]
Jia, Wei [1 ,2 ]
Shang, Lin [3 ]
Zhai, Guangmei [1 ,2 ]
Xu, Bingshe [1 ,2 ,3 ]
机构：
[1] Taiyuan Univ Technol, Minist Educ, Key Lab Interface Sci & Engn Adv Mat, Taiyuan 030024, Shanxi, Peoples R China
[2] Taiyuan Univ Technol, Res Ctr Adv Mat Sci & Technol, Taiyuan 030024, Shanxi, Peoples R China
[3] Shaanxi Univ Sci & Technol, Inst Atom & Mol Sci, Xian 710021, Shaanxi, Peoples R China
来源：
APPLIED OPTICS | 2018年 / 57卷 / 11期
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
FOCUSED ION-BEAM; QUANTUM-WELLS; GAN; EXTRACTION; EFFICIENCY; SURFACE; ETCH;
D O I：
10.1364/AO.57.002835
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
InGaN/GaN micro-square array light-emitting diode (LED) chips (micro-chips) have been prepared via the focused ion beam (FIB) etching technique, which can not only reduce ohmic contact degradation but also control the aspect ratio precisely in three-dimensional (3D) structure LED (3D-LED) device fabrication. The effects of FIB beam current and micro-square array depth on morphologies and optical and electrical properties of the micro-chips have been studied. Our results show that sidewall surface morphology and optical and electrical properties of the micro-chips degrade with increased beam current. After potassium hydroxide etching with different times, an optimal current-voltage and luminescence performance can be obtained. Combining the results of cathodoluminescence mappings and light output-current characteristics, the light extraction efficiency of the micro-chips is reduced as FIB etch depth increases. The mechanisms of micro-square depth on light extraction have been revealed by 3D finite difference time domain. (C) 2018 Optical Society of America
引用
收藏
页码：2835 / 2840
页数：6
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