High-Pressure Phase Transitions and Structures of Topological Insulator BiTel

被引:49
作者
Chen, Yuanzheng [1 ,2 ]
Xi, Xiaoxiang [3 ]
Yim, Wai-Leung [4 ]
Peng, Feng [1 ]
Wang, Yanchao [1 ]
Wang, Hui [1 ]
Ma, Yanming [1 ]
Liu, Guangtao [1 ]
Sun, Chenglin [2 ]
Ma, Chunli [1 ,5 ]
Chen, Zhiqiang [6 ]
Berger, H. [7 ]
机构
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Phys, Changchun 130012, Peoples R China
[3] Brookhaven Natl Lab, Upton, NY 11973 USA
[4] Agcy Sci Technol & Res, Inst High Performance Comp, Singapore 138632, Singapore
[5] Carnegie Inst Washington, Geophys Lab, Washington, DC 20015 USA
[6] SUNY Stony Brook, Dept Geosci, Stony Brook, NY 11794 USA
[7] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland
关键词
SINGLE DIRAC CONE; CRYSTAL-STRUCTURE; SUPERCONDUCTIVITY; BI2TE3; SB2TE3; BI2SE3; MODEL; GAP;
D O I
10.1021/jp409824g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Being a giant bulk Rashba semiconductor, the ambient-pressure phase of BiTeI was predicted to transform into a topological insulator under pressure at 1.7-4.1 GPa [Nat. Commun. 2012, 3, 679]. Because the structure governs the new quantum state of matter, it is essential to establish the high-pressure phase transitions and structures of BiTeI for better understanding its topological nature. Here, we report a joint theoretical and experimental study up to 30 GPa to uncover two orthorhombic high-pressure phases of Pnma and P4/nmm structures named phases II and III, respectively. Phases II (stable at 8.8-18.9 GPa) and III (stable at >18.9 GPa) were first predicted by our first-principles structure prediction calculations based on the calypso method and subsequently confirmed by our high-pressure powder X-ray diffraction experiment. Phase II can be regarded as a partially ionic structure, consisting of positively charged (BiTe)(+) ladders and negatively charged I- ions. Phase III is a typical ionic structure characterized by interconnected cubic building blocks of Te-Bi-I stacking. Application of pressures up to 30 GPa tuned effectively the electronic properties of BiTeI from a topological insulator to a normal semiconductor and eventually a metal having a potential of superconductivity.
引用
收藏
页码:25677 / 25683
页数:7
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