Observation of a complex Franz-Keldysh oscillation in InAs/GaAs quantum dots

被引：2
|
作者：
Kim, Jong Su [1 ]
机构：
[1] Yeungnam Univ, Dept Phys, Gyongsan 38541, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2016年 / 69卷 / 10期
关键词：
InAs/GaAs quantum dot; Photoreflectance spectroscopy; Franz-Keldysh effect; STRAINED-LAYER SUPERLATTICES; DELTA-DOPED GAAS; ELECTRIC-FIELDS; PHOTOREFLECTANCE SPECTROSCOPY; OPTICAL-PROPERTIES; SOLAR-CELL; GROWTH; PHOTOVOLTAGE; DEPENDENCE; EPITAXY;
D O I：
10.3938/jkps.69.1581
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this research, complex Franz-Keldysh oscillations (FKOs) were observed from InAs/GaAs quantum dots (QDs) by using the low-temperature photoreflectance spectroscopy. The results suggested that the complex FKOs originated from various electric fields at the interfaces between GaAs and the InAs QD. Electric field strengths were evaluated by using a fast Fourier transform analysis. The fields had a broad range from similar to 5 x 10(3) to similar to 2 x 10(5) V/cm. In this paper, strain-induced interface electric fields are suggested on the origins of the FKOs. Moreover, the straininduced lattice deformation, the defect generation, and the quantum confinement effect are discussed as possible sources for the interface electric fields.
引用
收藏
页码：1581 / 1586
页数：6
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