Graphene Nanoribbon Tunnel Transistors

被引：174

作者：

Zhang, Qin ^{[1
]}

Fang, Tian ^{[1
]}

Xing, Huili ^{[1
]}

Seabaugh, Alan ^{[1
]}

Jena, Debdeep ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 12期

基金：

美国国家科学基金会;

关键词：

Graphene; subthreshold swing; tunnel transistor; 1-D;

D O I：

10.1109/LED.2008.2005650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A graphene nanoribbon (GNR) tunnel field-effect transistor (TFET) is proposed and modeled analytically. Ribbon widths between 3 and 10 nm are considered, corresponding to energy bandgaps in the range of 0.46 to 0.14 eV. It is shown that a 5-nm ribbon width TFET can switch from on to off with only 0.1-V gate swing. The transistor achieves 800 mu A/mu m ON-state current and 26 pA/mu m OFF-state current, with an effective subthreshold swing of 0.19 mV/dee. Compared to a projected 2009 nMOSFET, the GNR TFET can provide 5 x higher speed, 20 x lower dynamic power, and 280 000 x lower OFF-state power dissipation. The high performance of GNR TFETs results from their narrow bandgaps and their 1-D nature.

引用

页码：1344 / 1346

页数：3

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