Characterization of a GaN bipolar junction transistor after operation at 300 for over 300 h

GaN with an n-p-n structure was grown using gas-source molecular beam epitaxy (GSMBE). We fabricated an n-p-n GaN bipolar junction transistor. The high-temperature reliability of the bipolar junction transistor (BJT) was investigated. That is, the lifetime performance of the BJT at 300 degrees C was examined during continuous current injection at 300 degrees C. We confirmed that the performance of the bipolar transistor at 300 degrees C did not change for over 300 h. No degradation of the metal-semiconductor interface was observed by transmission electron microscopy (TEM). The reliability of the GaN BJT at 300 degrees C was thus confirmed.