Ge-Si and Si-Ge core-shell nanocrystals: Theoretical study

被引:6
|
作者
Javan, Masoud Bezi [1 ]
机构
[1] Golestan Univ, Dept Phys, Fac Sci, Gorgan, Iran
关键词
Core-shell; Nanocrystals; Time Dependent Density Functional Theory; AB-INITIO; SILICON; PHOTOLUMINESCENCE; LUMINESCENCE; ABSORPTION; NANOWIRES; GAPS;
D O I
10.1016/j.tsf.2015.05.009
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic and optical properties of Ge-Si and Si-Ge core-shell nanocrystals (NCs) were investigated using pure and time-dependent density functional theory calculations. The Si and Ge NCs with diameter of about 2 nm are considered for constructing of the Ge-Si and Si-Ge core-shell NCs, respectively. The dependency of the optical and electronic properties of Ge-Si and Si-Ge core-shell NCs was studied with defined structural parameters as the ratio of the core radius (R-1) to the NC radius (R-2). It is found that the single particle energy gap, optical gap and exciton binding energy of the different core-shell NCs are strongly dependent on the structural parameter of R-1/R-2. It is shown that the energy gap, optical gap and lowest exciton binding energy of the both core-shell NCs can be modulated with structural parameter variations. The results presented in this work can be used for development and tuning of the electronic and optoelectronic properties of nanodevices based on Si and Ge core-shell NCs. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:120 / 124
页数:5
相关论文
共 50 条
  • [41] The Role of Atomic Hydrogen in Ge/Si Core-Shell Nanowires
    Kim, Jongseob
    Kim, Kyung Yeon
    Choi, Hyoung Joon
    Hong, Ki-Ha
    JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (35): : 20710 - 20715
  • [42] Electronic properties of strained Si/Ge core-shell nanowires
    Peng, Xihong
    Logan, Paul
    APPLIED PHYSICS LETTERS, 2010, 96 (14)
  • [43] The growth and radial analysis of Si/Ge core-shell nanowires
    Chang, Hsu-Kai
    Lee, Si-Chen
    APPLIED PHYSICS LETTERS, 2010, 97 (25)
  • [44] Electronic and dynamical properties of Si/Ge core-shell nanowires
    Peelaers, H.
    Partoens, B.
    Peeters, F. M.
    PHYSICAL REVIEW B, 2010, 82 (11):
  • [45] Tailoring Thermal Conductivity of Ge/Si Core-Shell Nanowires
    Sarikurt, Sevil
    Sevik, Cem
    Kinaci, Alper
    Haskins, Justin B.
    Cagin, Tahir
    Proceedings of the TMS Middle East - Mediterranean Materials Congress on Energy and Infrastructure Systems (MEMA 2015), 2015, : 433 - 440
  • [46] Si and Si-Ge wires for thermoelectrics
    Druzhinin, Anatoly
    Ostrovskii, Igor
    Kogut, Iurii
    Nichkalo, Stepan
    Shkumbatyuk, Taras
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03): : 867 - 870
  • [47] CHARACTERIZATION OF SI-GE AND SI-GE-GAP THERMOELEMENTS
    OWUSUSEKYERE, K
    JESSER, WA
    ROSI, FD
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 3 (03): : 231 - 240
  • [48] Controlling Catalyst-Free Formation and Hole Gas Accumulation by Fabricating Si/Ge Core-Shell and Si/Ge/Si Core-Double Shell Nanowires
    Zhang, Xiaolong
    Jevasuwan, Wipakorn
    Sugimoto, Yoshimasa
    Fukata, Naoki
    ACS NANO, 2019, 13 (11) : 13403 - 13412
  • [49] Intermixing during Ripening in Ge-Si Incoherent Epitaxial Nanocrystals
    Leite, Marina S.
    Kamins, Theodore I.
    Williams, R. Stanley
    Medeiros-Ribeiro, Gilberto
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (01): : 901 - 907
  • [50] Study of Si-Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate
    Zhang, Chao
    Song, Jianjun
    Zhang, Jie
    SCIENCE OF ADVANCED MATERIALS, 2021, 13 (01) : 1 - 9