Field-induced functions of porous Si as a confined system

被引：0

作者：

Koshida, N ^{[1
]}

Ueno, K ^{[1
]}

Sheng, X ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Fac Technol, Dept Elect & Elect Engn, Koganei, Tokyo 184, Japan

来源：

LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS | 1999年 / 77卷

关键词：

porous silicon; electroluminescence; negative resistance; memory; cold electron emission;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electroluminescent porous Si (PS) diodes exhibit various useful functions under a high-electric field. The experimental PS diodes are composed of thin semitransparent metal films, PS layers (about 500 nm thick in minimum), p- or n-type Si substrates and ohmic back contacts. Definite nonlinear electrical behavior (negative resistance and nonvolatile bistable memory effects) and cold electron emission phenomena appear in these PS diodes associated with the EL emission. Both the negative resistance and memory effects are related to the charging of Si nanocrystallites by field-induced carrier injection. The electron emission observed in the PS diodes formed on n + -Si substrates is caused by hot electrons tunnelling through the top contact. By an appropriate structural control of PS, the effective drift length under a high-field conduction is significantly increased, and then electrons are emitted ballistically. These functions reflect the activity of PS as a nanocrystalline confined system. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：37 / 42

页数：6