Coexistence of two-dimensional and three-dimensional Shubnikov-de Haas oscillations in Ar+-irradiated KTaO3

被引：53
作者：
Harashima, S. [1 ,2 ]
Bell, C. [1 ]
Kim, M. [1 ,3 ]
Yajima, T. [1 ,3 ]
Hikita, Y. [1 ]
Hwang, H. Y. [1 ,4 ]
机构：
[1] Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA
[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
[3] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan
[4] Stanford Univ, Dept Appl Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA
来源：
PHYSICAL REVIEW B | 2013年 / 88卷 / 08期
关键词：
ELECTRON-GAS; SRTIO3; SUPERCONDUCTIVITY; SURFACE; FILMS;
D O I：
10.1103/PhysRevB.88.085102
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report electron doping in the surface vicinity of KTaO3 by inducing oxygen vacancies via Ar+ irradiation. The doped electrons have high mobility (>10(4) cm(2)/V s) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar+ irradiation serves as a flexible tool to study low-dimensional quantum transport in 5d semiconducting oxides.
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页数：7
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