Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures

被引：9

作者：

Lo, I ^{[1
]}

Tsai, JK

Tu, LW

Hsieh, KY

Tsai, MH

Liu, CS

Huang, JH

Elhamri, S

Mitchel, WC

Sheu, JK

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

[2] Natl Sun Yat Sen Univ, Inst Mat Sci, Kaohsiung 80424, Taiwan

[3] USAF, Res Lab, MLPS, Wright Patterson AFB, Dayton, OH 45433 USA

[4] Natl Cent Univ, Inst Opt Sci, Chungli 32000, Taiwan

[5] Univ Dayton, Dept Phys, Dayton, OH 45469 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 15期

关键词：

D O I：

10.1063/1.1469209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al0.35-deltaIndeltaGa0.65N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov-de Haas (SdH) measurements. In the sample of delta<0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248x10(13) cm(-2) and the electric field at the interface is reduced to 2.19x10(4) V/cm, which is one order of magnitude smaller than that of Al0.35Ga0.65N/GaN heterostructure. We suggest that a small fraction of In atoms in the Al0.35-delta In delta Ga0.65N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface. (C) 2002 American Institute of Physics.

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收藏

页码：2684 / 2686

页数：3

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