FinFETs for nanoscale CMOS digital integrated circuits

被引：84
|
作者：
King, TJ [1 ]
机构：
[1] Synopsys Inc, Adv Technol Grp, Mountain View, CA USA
来源：
ICCAD-2005: INTERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN, DIGEST OF TECHNICAL PAPERS | 2005年
关键词：
MOSFET; thin-body transistor; CMOS; SRAM; digital IC;
D O I：
10.1109/ICCAD.2005.1560065
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Suppression of leakage current and reduction in device-to-device variability will be key challenges for sub-45nm CMOS technologies. Non-classical transistor structures such as the FinFET will likely be necessary to meet transistor performance requirements in the sub-20nm gate length regime. This paper presents an overview of FinFET technology and describes how it can be used to improve the performance, standby power consumption, and variability in nanoscale-CMOS digital ICs.
引用
收藏
页码：207 / 210
页数：4
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