FinFETs for nanoscale CMOS digital integrated circuits

被引：84

作者：

King, TJ ^{[1
]}

机构：

[1] Synopsys Inc, Adv Technol Grp, Mountain View, CA USA

来源：

ICCAD-2005: INTERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN, DIGEST OF TECHNICAL PAPERS | 2005年

关键词：

MOSFET; thin-body transistor; CMOS; SRAM; digital IC;

D O I：

10.1109/ICCAD.2005.1560065

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Suppression of leakage current and reduction in device-to-device variability will be key challenges for sub-45nm CMOS technologies. Non-classical transistor structures such as the FinFET will likely be necessary to meet transistor performance requirements in the sub-20nm gate length regime. This paper presents an overview of FinFET technology and describes how it can be used to improve the performance, standby power consumption, and variability in nanoscale-CMOS digital ICs.

引用

页码：207 / 210

页数：4

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