A Multi-Valued 350nm CMOS Voltage Reference

被引：0
|
作者：
Lourenco, Nuno [1 ,2 ]
Alves, Luis Nero [1 ,2 ]
Cura, Jose Luis [1 ,2 ]
机构：
[1] Inst Telecomunicacoes, Campus Santiago, Aveiro, Portugal
[2] Univ Aveiro, Dept Elect Telecomunicacoes & Informat, Aveiro, Portugal
来源：
2012 19th IEEE International Conference on Electronics, Circuits and Systems (ICECS) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes, a voltage reference source using sub-threshold MOSFETs. The circuit supports supply voltages ranging from 1.5V to 3.3V and temperature variations ranging from -20 degrees C to 80 degrees C. Different values for the voltage reference can be achieved without severe performance impairments. The proposed circuit was produced in the 350nm CMOS process from AMS and occupies less than 0.0335mm(2). Simulation and experimental data show that this circuit is able to achieve, a 3mV variation for the entire temperature span and a 2 mV variation for the entire supply voltage span.
引用
收藏
页码：629 / 632
页数：4
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