In situ thermal preparation of oxide surfaces

被引：36

作者：

Braun, Wolfgang ^{[1
]}

Jaeger, Maren ^{[1
]}

Laskin, Gennadii ^{[1
]}

Ngabonziza, Prosper ^{[1
]}

Voesch, Wolfgang ^{[1
]}

Wittlich, Pascal ^{[1
]}

Mannhart, Jochen ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany

来源：

APL MATERIALS | 2020年 / 8卷 / 07期

关键词：

GROWTH;

D O I：

10.1063/5.0008324

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Substrate surfaces terminated with a specific surface reconstruction are a prerequisite for the controlled epitaxial growth of most materials. Focusing on SrTiO3 (001) substrates, it has recently been shown that in situ substrate termination by thermal annealing has decisive advantages over standard termination methods. We report here that in situ substrate termination is a generally applicable method not restricted to SrTiO3 crystals. We specifically demonstrate the successful surface preparation of doped SrTiO3 (001), LaAlO3 (001), NdGaO3 (001), DyScO3 (110), TbScO3 (110), MgO (001), and Al2O3 (0001) surfaces.

引用

页数：22

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