Transport phenomena in a high pressure crystal growth system: In situ synthesis for InP melt

被引：5
|
作者：
Zhang, H
Prasad, V
Anselmo, AP
Bliss, DF
Iseler, G
机构：
[1] SUNY STONY BROOK,CONSORTIUM CRYSTAL GROWTH RES,STONY BROOK,NY 11794
[2] USAF,ROME LAB,HANSCOM AFB,MA 01731
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 177卷 / 3-4期
关键词：
Czochralski growth; convection; high-pressure; liquid-encapsulated Cz growth;
D O I：
10.1016/S0022-0248(96)01079-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The physical phenomena underlying the ''one-step'' in situ synthesis and high pressure growth of indium phosphide crystals are complex. A high resolution computer model based on multizone adaptive grid generation and curvilinear finite volume discretization is used to predict the flow and temperature fields during the synthesis of the InP melt. Simulations are performed for a range of parameters, including Grashof number, crucible rotation, and location of the injector. These parameters affect the gas flow in a high pressure liquid-encapsulated Czochralski (HPLEC) furnace significantly, and have a strong influence on the melt synthesis and its control.
引用
收藏
页码：196 / 206
页数：11
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