Thermal Annealing Free Radicals in γ-Irradiated KDP and DKDP Crystals

被引：0

作者：

Levchenko, A. N. ^{[1
]}

机构：

[1] Kharkov Natl Univ, Dept Quantum Radiophys, Kharkiv, Ukraine

来源：

2019 IEEE 8TH INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS (CAOL) | 2019年

关键词：

KH2PO4; KD2PO4; gamma-irradiation; EPR; free radicals; thermal annealing; ELECTRON-SPIN-RESONANCE; RADIATION-DAMAGE; DEFECT STRUCTURE; KH2PO4; IDENTIFICATION; CENTERS; EPR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron paramagnetic resonance (EPR) investigation of the gamma-irradiated crystals of potassium dihydrogen phosphate (KR2PO4, KDP) and its deuterated analogue (KD2PO4, DKDP) is carried out. It is found that gamma-irradiation leads to the formation of the thermally stable impurity arsenic-centered and intrinsic phosphorus-containing free radicals. Thermal annealing of the crystals in the temperature range of 90-160 degrees C has been conducted. It is established that the thermal stability of the intrinsic defects is higher in comparison with the impurity ones. The nature of the phosphorus-containing free radicals is discussed.

引用

页码：448 / 451

页数：4