Comparative study on TeO2 and TeO3 thin film for γ-ray sensor application

被引：27
作者：
Dewan, Namrata [1 ]
Sreenivas, K. [1 ]
Gupta, Vinay [1 ]
机构：
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2008年 / 147卷 / 01期
关键词：
gamma-radiation; dosimetry; TeO3; film; rf sputtering;
D O I：
10.1016/j.sna.2008.04.011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tellurium trioxide (TeO3) and tellurium dioxide (TeO2) thin film has been deposited by rf sputtering. The influence of gamma-radiation closes (in the range 10-50 Gy) on the optical and electrical properties of as-deposited films were studied. Optical band gap values were found to decrease with increasing radiation dose whereas electrical conductivity was increased by about five orders in magnitude. Monotonic decrease in the values of dielectric constant for the deposited TeO3 films with increase in radiation dose was observed. The gamma-ray response behavior of TeO3 and TeO2 thin films are compared, and TeO1 thin film is found to be More Suitable in amorphous Form for gamma-ray detection. (C) 2008 Elsevier B.V. All rights reserved.
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收藏
页码：115 / 120
页数：6
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