Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

被引:17
作者
Du, Zhu-Zhu [1 ,2 ]
Li, Wen [1 ,2 ]
Ai, Wei [1 ,2 ]
Tai, Qiang [1 ,2 ]
Xie, Ling-Hai [1 ,2 ,3 ,4 ]
Cao, Yong [1 ,2 ]
Liu, Ju-Qing [1 ,2 ]
Yi, Ming-Dong [1 ,2 ]
Ling, Hai-Feng [1 ,2 ]
Li, Zeng-Hui [1 ,2 ]
Huang, Wei [1 ,2 ,3 ,4 ]
机构
[1] Nanjing Univ Posts & Telecommun, KLOEID, CMSOD, Nanjing 210046, Jiangsu, Peoples R China
[2] Nanjing Univ Posts & Telecommun, IAM, Nanjing 210046, Jiangsu, Peoples R China
[3] Nanjing Univ Technol, Singapore Jiangsu Joint Res Ctr Organ Bioelect &, Nanjing 211816, Jiangsu, Peoples R China
[4] Nanjing Univ Technol, IAM, Nanjing 211816, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
EPITAXIAL GRAPHENE; FILMS;
D O I
10.1039/c3ra43819h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 10(4) compared to that of the precursor, graphene oxide (GO).
引用
收藏
页码:25788 / 25791
页数:4
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