Preferential growth transformation of Bi0.5Sb1.5Te3 films induced by facile post-annealing process: Enhanced thermoelectric performance with layered structure

被引：38
作者：
Zhu, Wei [1 ]
Deng, Yuan [1 ]
Wang, Yao [1 ]
Luo, Bingwei [1 ]
Cao, Lili [1 ]
机构：
[1] Beihang Univ, Sch Mat Sci & Engn, Beijing Key Lab Adv Funct Mat & Thin Film Technol, Beijing 100191, Peoples R China
来源：
THIN SOLID FILMS | 2014年 / 556卷
基金：
中国国家自然科学基金;
关键词：
Thermoelectric properties; Thin films; Sputtering; Bismuth antimony telluride; Preferential growth; Thermoelectric performance; N-TYPE BI2TE2.7SE0.3; THIN-FILMS; NANOSTRUCTURES; FIGURE;
D O I：
10.1016/j.tsf.2014.02.041
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Preferential growth transformation from (015) plane to (001) plane of the bismuth antimony tellurium (Bi0.5Sb1.5Te3) film has been achieved through a facile post-annealing process with enhanced thermoelectric performance. The Bi0.5Sb1.5Te3 film with preferential growth of (015) crystal plane was obtained via dc magnetron sputtering, and the Stranski-Krastanovmodel has been used to explain its growth mechanism. Preferential growth transformation from (015) plane to (001) plane occurred after a post-annealing process. The driving force of this phenomenon is the natural tendency to reduce the total interfacial energy of the system, and the migration and coalescence of atoms along the in-plane direction form the layered structure. Moreover, the carrier concentration of Bi0.5Sb1.5Te3 films is optimized to similar to 0(19)/cm(3) in the film with preferential growth of (001) plan. Hence, a synchronous increase of electrical conductivity and Seebeck coefficient is obtained due to the greatly enhanced carrier mobility and optimized carrier concentration. Therefore, the Bi0.5Sb1.5Te3 film with the preferential growth of (001) plane possesses power factor of 48.2 mu W/cmK(2) which is three times higher than that of the film with the preferential growth of (015) plane. Our study has provided a facile strategy to induce preferential growth transformation in Bi0.5Sb1.5Te3 films and meanwhile largely enhanced the thermoelectric performance. (C) 2014 Elsevier B.V. All rights reserved.
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收藏
页码：270 / 276
页数：7
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