Minority Currents in n-Doped Organic Transistors

被引：12

作者：

Al-Shadeedi, Akram ^{[1
]}

Liu, Shiyi ^{[1
]}

Keum, Chang-Min ^{[1
]}

Kasemann, Daniel ^{[3
]}

Hossbach, Christoph ^{[4
]}

Bartha, Johann ^{[4
]}

Bunge, Scott D. ^{[2
]}

Luessem, Bjorn ^{[1
]}

机构：

[1] Kent State Univ, Dept Phys, Kent, OH 44242 USA

[2] Kent State Univ, Dept Chem & Biochem, Kent, OH 44242 USA

[3] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

[4] Tech Univ Dresden, Inst Halbleiter & Mikrosyst Tech, D-01062 Dresden, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 47期

关键词：

n-channel transistor; pentacene field-effect transistor; n-type molecular doping; ambipolar transistor; Zener tunneling; minority currents; FIELD-EFFECT TRANSISTORS; TRANSITION-METAL OXIDES; LIGHT-EMITTING-DIODES; ELECTRONIC MATERIALS; SEMICONDUCTORS; TRANSPORT; AMBIPOLAR; EFFICIENT; MOBILITY; DEVICES;

D O I：

10.1021/acsami.6b11149

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Doping allows us to control the majority and minority charge carrier concentration in organic field-effect transistors. However, the precise mechanism of minority charge carrier generation and transport in organic semiconductors is largely unknown. Here, the injection of minority charge carriers into n-doped organic field-effect transistors is studied. It is shown that holes can be efficiently injected into the transistor channel via Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. Moreover, it is shown that the onset of minority (hole) conduction is shifted by lightly n-doping the channel region of the transistor. This behavior can be explained by a large voltage that has to be applied to the gate in order to fully deplete the n-doped layer as well as an increase in hole trapping by inactive dopants.

引用

页码：32432 / 32439

页数：8

共 47 条

[1] Carrier injection characteristics of metal/tris-(8-hydroxyquinoline) aluminum interface with long chain alkane insertion layer [J].