Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates

被引:179
作者
Baldassarre, Leonetta [1 ,2 ]
Sakat, Emilie [3 ]
Frigerio, Jacopo [4 ]
Samarelli, Antonio [5 ]
Gallacher, Kevin [5 ]
Calandrini, Eugenio [1 ]
Isella, Giovanni [4 ]
Paul, Douglas J. [5 ]
Ortolani, Michele [1 ]
Biagioni, Paolo [3 ]
机构
[1] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy
[2] Ist Italiano Tecnol, Ctr Life Nano Sci Sapienza, I-00161 Rome, Italy
[3] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy
[4] Politecn Milan, Dipartimento Fis, LNESS, I-22100 Como, Italy
[5] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland
关键词
Silicon technology; plasmonics; mid-infrared spectroscopy; explosives detection; GE-ON-SI; CHEMICAL-VAPOR-DEPOSITION; NANOANTENNAS; PHOTONICS; METAMATERIALS; GOLD; HETEROSTRUCTURES; SYSTEMS; LASER;
D O I
10.1021/acs.nanolett.5b03247
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Midinfrared plasmonic sensing allows the direct targeting of unique vibrational fingerprints of molecules. While gold has been used almost exclusively so far, recent research has focused on semiconductors with the potential to revolutionize plasmonic devices. We fabricate antennas out of heavily doped Ge films epitaxially grown on Si wafers and demonstrate up to 2 orders of magnitude signal enhancement for the molecules located in the antenna hot spots compared to those located on a bare silicon substrate. Our results set a new path toward integration of plasmonic sensors with the ubiquitous CMOS platform.
引用
收藏
页码:7225 / 7231
页数:7
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