Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy

被引：4
作者：
Kurka, Marcin [1 ]
Rygala, Michal [1 ]
Sek, Grzegorz [1 ]
Gutowski, Piotr [2 ]
Pierscinski, Kamil [2 ]
Motyka, Marcin [1 ]
机构：
[1] Wroclaw Univ Technol, Dept Expt Phys, Lab Opt Spect Nanostruct, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland
[2] Inst Electr Mat Technol, Lukasiewicz Res Network, Al Lotnikow 32-48, PL-02668 Warsaw, Poland
来源：
MATERIALS | 2020年 / 13卷 / 14期
关键词：
Berreman effect; quantum cascade lasers; gas sensing; carrier concentration; mid-infrared; TRANSMISSION; REFLECTION; GAAS;
D O I：
10.3390/ma13143109
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the waveguide claddings. Determining those in a nondestructive manner is, on the one hand, demanded for the fabrication process efficiency, but on the other, challenging experimentally, especially for complex multilayer systems. Here, we present the results of carrier concentration determination in In0.53Ga0.47As layers, designed to be a material forming quantum cascade laser active areas, using a direct and contactless method utilizing the Berreman effect, and employing Fourier-transform infrared (FTIR) spectroscopy. The results allowed us to precisely determine the free carrier concentration versus changes in the nominal doping level and provide feedback regarding the technological process by indicating the temperature adjustment of the dopant source.
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页数：8
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