Vapor-phase growth of high-quality wafer-scale two-dimensional materials

被引:58
作者
Tong, Xin [1 ]
Liu, Keli [2 ]
Zeng, Mengqi [1 ]
Fu, Lei [1 ,2 ]
机构
[1] Wuhan Univ, Coll Chem & Mol Sci, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Inst Adv Studies IAS, Wuhan, Peoples R China
基金
中国国家自然科学基金;
关键词
two-dimensional materials; vapor-phase growth; wafer scale; SINGLE-CRYSTAL GRAPHENE; TRANSITION-METAL DICHALCOGENIDES; DEPOSITION GROWTH; EVOLUTIONARY SELECTION; MOLYBDENUM-DISULFIDE; MONOLAYER GRAPHENE; GRAIN-BOUNDARIES; LIQUID-METAL; RAPID GROWTH; MOS2;
D O I
10.1002/inf2.12038
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Emerging two-dimensional (2D) materials have stimulated tremendous scientific and industrial interests due to their diverse and tunable physical, chemical, and mechanical properties. The scalable production of high-quality wafer-scale 2D materials has become significantly essential to bring us closer to practical industrial applications, particularly in electronic devices. Vapor-phase growth provides attractive opportunities for the synthesis of large-area and high-quality 2D materials. In this review, we will emphasize vapor-phase growth strategies from three aspects, including suppressing nucleation, seamless stitching, and evolutionary selection growth. We discuss the general understanding of the related fundamental mechanism and specific parameter optimization from precursors and substrate design to the adjusting of growth parameters (temperature and pressure). Meanwhile, we present other strategies to produce various kinds of wafer-scale 2D materials. Finally, we conclude the current challenges and future directions in this developing field. This work may inspire researchers to better design routes in the synthesis of wafer-scale 2D materials with high quality.
引用
收藏
页码:460 / 478
页数:19
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