Via Method for Lithography Free Contact and Preservation of 2D Materials

被引:74
作者
Telford, Evan J. [1 ]
Benyamini, Avishai [2 ]
Rhodes, Daniel [2 ]
Wang, Da [1 ]
Jung, Younghun [2 ]
Zangiabad, Amirali [3 ]
Watanabe, Kenji [4 ]
Taniguchi, Takashi [4 ]
Jia, Shuang [5 ,6 ]
Barmak, Katayun [3 ]
Pasupathy, Abhay N. [1 ]
Dean, Cory R. [1 ]
Hone, James [2 ]
机构
[1] Columbia Univ, Dept Phys, 538 W 120th St, New York, NY 10027 USA
[2] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA
[3] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA
[4] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[5] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[6] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
基金
新加坡国家研究基金会;
关键词
Graphene; niobium diselenide; molybdenum ditelluride; air-sensitive; van der Waals materials; 2-DIMENSIONAL MATERIAL; EDGE CONTACTS; GRAPHENE; METAL; HETEROSTRUCTURES; RESISTANCE; CRYSTALS; MOS2;
D O I
10.1021/acs.nanolett.7b05161
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Atomically thin 2D materials span the common components of electronic circuits as metals, semiconductors, and insulators, and can manifest correlated phases such as superconductivity, charge density waves, and magnetism. An ongoing challenge in the field is to incorporate these 2D materials into multilayer heterostructures with robust electrical contacts while preventing disorder and degradation. In particular, preserving and studying air-sensitive 2D materials has presented a significant challenge since they readily oxidize under atmospheric conditions. We report a new technique for contacting 2D materials, in which metal via contacts are integrated into flakes of insulating hexagonal boron nitride, and then placed onto the desired conducting 2D layer, avoiding direct lithographic patterning onto the 2D conductor. The metal contacts are planar with the bottom surface of the boron nitride and form robust contacts to multiple 2D materials. These structures protect air-sensitive 2D materials for months with no degradation in performance. This via contact technique will provide the capability to produce "atomic printed circuit boards" that can form the basis of more complex multilayer heterostructures.
引用
收藏
页码:1416 / 1420
页数:5
相关论文
共 32 条
[1]   Electrical contacts to two-dimensional semiconductors [J].
Allain, Adrien ;
Kang, Jiahao ;
Banerjee, Kaustav ;
Kis, Andras .
NATURE MATERIALS, 2015, 14 (12) :1195-1205
[2]   Visibility of dichalcogenide nanolayers [J].
Benameur, M. M. ;
Radisavljevic, B. ;
Heron, J. S. ;
Sahoo, S. ;
Berger, H. ;
Kis, A. .
NANOTECHNOLOGY, 2011, 22 (12)
[3]   Making consistent contacts to graphene: effect of architecture and growth induced defects [J].
Bharadwaj, B. Krishna ;
Nath, Digbijoy ;
Pratap, Rudra ;
Raghavan, Srinivasan .
NANOTECHNOLOGY, 2016, 27 (20)
[4]   Effect of Deposition Rate on Structure and Surface Morphology of Thin Evaporated Al Films on Dielectrics and Semiconductors [J].
Bordo, Kirill ;
Rubahn, Horst-Gunter .
MATERIALS SCIENCE-MEDZIAGOTYRA, 2012, 18 (04) :313-317
[5]   Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere [J].
Cao, Y. ;
Mishchenko, A. ;
Yu, G. L. ;
Khestanova, E. ;
Rooney, A. P. ;
Prestat, E. ;
Kretinin, A. V. ;
Blake, P. ;
Shalom, M. B. ;
Woods, C. ;
Chapman, J. ;
Balakrishnan, G. ;
Grigorieva, I. V. ;
Novoselov, K. S. ;
Piot, B. A. ;
Potemski, M. ;
Watanabe, K. ;
Taniguchi, T. ;
Haigh, S. J. ;
Geim, A. K. ;
Gorbachev, R. V. .
NANO LETTERS, 2015, 15 (08) :4914-4921
[6]   Optical identification of atomically thin dichalcogenide crystals [J].
Castellanos-Gomez, A. ;
Agrait, N. ;
Rubio-Bollinger, G. .
APPLIED PHYSICS LETTERS, 2010, 96 (21)
[7]   Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes [J].
Cui, Xu ;
Shih, En-Min ;
Jauregui, Luis A. ;
Chae, Sang Hoon ;
Kim, Young Duck ;
Li, Baichang ;
Seo, Dongjea ;
Pistunova, Kateryna ;
Yin, Jun ;
Park, Ji-Hoon ;
Choi, Heon-Jin ;
Lee, Young Hee ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Kim, Philip ;
Dean, Cory R. ;
Hone, James C. .
NANO LETTERS, 2017, 17 (08) :4781-4786
[8]  
Cui X, 2015, NAT NANOTECHNOL, V10, P534, DOI [10.1038/nnano.2015.70, 10.1038/NNANO.2015.70]
[9]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726
[10]   Superconductivity in two-dimensional NbSe2 field effect transistors [J].
El-Bana, Mohammed S. ;
Wolverson, Daniel ;
Russo, Saverio ;
Balakrishnan, Geetha ;
Paul, Don Mck ;
Bending, Simon J. .
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2013, 26 (12)