Future perspectives for spintronic devices

被引:397
作者
Hirohata, Atsufumi [1 ,2 ]
Takanashi, Koki [3 ]
机构
[1] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England
[2] Japan Sci & Technol Agcy JST, PRESTO, Kawaguchi, Saitama 3320012, Japan
[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
关键词
spintronics; devices; GMR; TMR; spin injection; ELECTRICAL SPIN-INJECTION; DOMAIN-WALL MOTION; SCANNING TUNNELING MICROSCOPE; LAYERED MAGNETIC-STRUCTURES; ROOM-TEMPERATURE; GIANT MAGNETORESISTANCE; FERROMAGNETIC SEMICONDUCTOR; POLARIZED TRANSPORT; THERMAL-STABILITY; HEUSLER-ALLOY;
D O I
10.1088/0022-3727/47/19/193001
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spintronics is one of the emerging research fields in nanotechnology and has been growing very rapidly. Studies of spintronics were started after the discovery of giant magnetoresistance in 1988, which utilized spin-polarized electron transport across a non-magnetic metallic layer. Within 10 years, this discovery had been implemented into hard disk drives, the most common storage media, followed by recognition through the award of the Nobel Prize for Physics 19 years later. We have never experienced such fast development in any scientific field. Spintronics research is now moving into second-generation spin dynamics and beyond. In this review, we first examine the historical advances in spintronics together with the background physics, and then describe major device applications.
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页数:40
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