Deuterium Implantation at the Back-end of Line for the Improvement of Gate Oxide Reliability in Nano-scale MOSFETs

被引：0

作者：

Lee, Jae-Sung ^{[1
]}

Do, Seung-Woo ^{[2
]}

Lee, Yong-Hyun ^{[2
]}

机构：

[1] Uiduk Univ, Div Informat & Commun Engn, Gyeongju, South Korea

[2] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Deagu, South Korea

来源：

2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3 | 2007年

关键词：

Deuterium; Gate oxide; MOS device; Reliability; Degradation; Implantation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is focused on the improvement of MOS device reliability related to deuterium incorporation in gate oxide. The injection of W ions into the gate oxide film was achieved through low-energy implantation at the back-end of line (BEOL) for the purpose of the passivation of dangling bonds at SiO2/Si interface and the generation of deuterium bonds in SiO2 bulk. Device parameter variations, as well as the gate leakage current, depend on the degradation of gate oxide and, compared to corresponding hydrogen incorporation, are improved by deuterium incorporation. However, when the concentration of deuterium is redundant in gate oxide, excess traps are generated and degrade the performance. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.

引用

页码：911 / +

页数：2

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