Growth of ZnSe layers on β(2 x 4)As, (i x 3)Te, and (4 x 2)Ga-terminated (001)GaAs substrates

被引：23

作者：

Carbonell, L ^{[1
]}

Etgens, VH ^{[1
]}

Koëbel, A ^{[1
]}

Eddrief, M ^{[1
]}

Capelle, B ^{[1
]}

机构：

[1] Lab Mineral Cristallog Paris, F-75252 Paris 05, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

ZnSe GaAs interfaces; transmisssion electron microscopy; x-ray diffraction;

D O I：

10.1016/S0022-0248(98)01386-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the influence of the surface stoichiometry of the (001)GaAs surface (beta(2 x 4)As, (i x 3)Te, and (4 x 2)Ga) on the growth mode and defect generation in MBE-grown ZnSe, For the beta(2 x 4)As and (i x 3)Te surfaces, no interfacial compounds are formed and the observed stacking faults are not related to the interface. The stacking fault densities and the critical thicknesses are comparable for both the beta(2 x 4)As and (i x 3)Te. For the ZnSe layers grown onto a(4 x 2)Ga surface, a different behavior is observed. Ga-related precipitates are formed near the interface. For thicknesses below 100 nm the misfit is partially relaxed by dislocations generated to accommodate the precipitates. Few stacking faults are generated and are seen to be nucleated at the precipitates. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：502 / 505

页数：4

共 50 条

[21] Effect of the Synthesis Conditions on the Crystal, Local, and Electronic Structures of Ce2x4+Ce2-2x3+ M2O7+x (M = Zr, Hf)
Popov, V. V.
Menushenkov, A. P.
Khubbutdinov, R. M.
Yastrebtsev, A. A.
Sharapov, A. S.
Zubavichus, Ya. V.
Svetogorov, R. D.
Trigub, A. L.
Tsarenko, N. A.
Arzhatkina, L. A.
Kurilkin, V. V.
RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2018, 63 (04) : 503 - 511
[22] Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
Lu, J.
Meng, H. J.
Deng, J. J.
Xu, P. F.
Chen, L.
Zhao, J. H.
Jia, Q. J.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (01)
[23] Rietveld refinements of a new solid solution Ba(3-x)Srx(PO4)2 (0≤x≤3)
Manoun, B
Popovic, L
De Waal, D
Verryn, SMC
POWDER DIFFRACTION, 2003, 18 (02) : 122 - 127
[24] Formation of γ-brass type pseudo-binary Ni2Zn11-4δXδ (0≤δ≤∼0.13) (X = In and Ga) by an exchange mechanism
Ghanta, Sivaprasad
Kamboj, Rajat
George, Nikhil Mohan
Jana, Partha P.
JOURNAL OF SOLID STATE CHEMISTRY, 2020, 289 (289)
[25] Synthesis, characterization and thermal investigation of M[M(C2O4)3]•xH2O -: (x = 4 for M = Cr(III); x = 2 for M = Sb(III) and x = 9 for M = La(III))
Deb, N
Baruah, SD
Sen Sarma, N
Dass, NN
THERMOCHIMICA ACTA, 1998, 320 (1-2) : 53 - 67
[26] Growth of κ-([Al,In] x Ga1-x)2O3 Quantum Wells and Their Potential for Quantum-Well Infrared Photodetectors
Schultz, Thorsten
Kneiss, Max
Storm, Philipp
Splith, Daniel
von Wenckstern, Holger
Koch, Christoph T.
Hammud, Adnan
Grundmann, Marius
Koch, Norbert
ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (24) : 29535 - 29541
[27] Hydrates [Na2(H2O)x](2-thiobarbiturate)2 (x=3, 4, 5): crystal structure, spectroscopic and thermal properties
Golovnev, Nicolay N.
Molokeev, Maxim S.
Sterkhova, Irina V.
Atuchin, Victor V.
Sidorenko, Maxim Y.
JOURNAL OF COORDINATION CHEMISTRY, 2016, 69 (21) : 3219 - 3230
[28] Atom Exchange Versus Reconstruction: (GexAs4-x)x-(x=2, 3) as Building Blocks for the Supertetrahedral Zintl Cluster [Au6(Ge3As)(Ge2As2)3]3-
Pan, Fuxing
Guggolz, Lukas
Weigend, Florian
Dehnen, Stefanie
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2020, 59 (38) : 16638 - 16643
[29] Structural and electrical properties of Na2Pb2Eu2W2Ti4X4O30 (X = Nb, Ta) ferroelectric ceramics
Das, Piyush R.
Biswal, L.
Behera, Banarji
Choudhary, R. N. P.
MATERIALS RESEARCH BULLETIN, 2009, 44 (06) : 1214 - 1218
[30] New molybdate Li2Co2-x Nix (MoO4)3 (0 ≤ x ≤ 2) materials with a lyonsite structure: X-ray diffraction and Raman spectroscopy studies
Bensaid, H.
El Bouari, A.
Benmokhtar, S.
Manoun, B.
Bih, L.
Lazor, P.
JOURNAL OF MOLECULAR STRUCTURE, 2013, 1031 : 152 - 159

← 1 2 3 4 5 →