MoS2 cleaning by acetone and UV-ozone: Geological and synthetic material

被引:11
作者
Freedy, Keren M. [1 ]
Sales, Maria Gabriela [1 ]
Litwin, Peter M. [1 ]
Krylyuk, Sergiy [2 ,3 ]
Mohapatra, Pranab [4 ]
Ismach, Ariel [4 ]
Davydov, Albert V. [3 ]
McDonnell, Stephen J. [1 ]
机构
[1] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
[2] Theiss Res Inc, La Jolla, CA 92037 USA
[3] NIST, Mat Sci & Engn Div, Gaithersburg, MD 20899 USA
[4] Tel Aviv Univ, Dept Mat Sci & Engn, IL-6997801 Tel Aviv, Israel
基金
以色列科学基金会; 美国国家科学基金会;
关键词
Surface treatments; Ozone; X-ray photoelectron spectroscopy; Photoresist residues; LAYER; GRAPHENE; RESIDUES; FILMS; XPS;
D O I
10.1016/j.apsusc.2019.01.222
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effects of poly(methyl methacrylate) PMMA removal procedures on the surface chemistry of both geological and synthetic MoS2 are investigated. X-ray photoelectron spectroscopy (XPS) is employed following acetone dissolution, thermal annealing, and ultraviolet-ozone (UV-O-3) treatment of PMMA-coated MoS2 samples. Specifically, we focus on the efficacy of polymer residue removal procedures and oxidation resistance of the different samples. Acetone dissolution followed by ultra-high vacuum (UHV) annealing was highly effective in removing carbon residues from one type of geological sample however not for a synthetic sample produced by sulfurization. Similarly, different types of samples require varying lengths of UV-O-3 exposure time for proper removal of residues, and some exhibit oxidation as a result. UV-O-3 exposure followed by a UHV anneal resulted in successful removal of carbon residues from MoS2 produced by sulfurization while a substantial carbon signal remained on a chemical vapor deposited MoS2 sample subjected to the same process. Differences in the effects of removal procedures are attributed to differences in surface morphology and material quality. For device fabrication applications, this work highlights the importance of developing PMMA removal processes specific to the MoS2 used with full consideration for the processing required to obtain the MoS2.
引用
收藏
页码:183 / 188
页数:6
相关论文
共 28 条
[1]   HfO2 on UV-O3 exposed transition metal dichalcogenides: interfacial reactions study [J].
Azcatl, Angelica ;
Santosh, K. C. ;
Peng, Xin ;
Lu, Ning ;
McDonnell, Stephen ;
Qin, Xiaoye ;
de Dios, Francis ;
Addou, Rafik ;
Kim, Jiyoung ;
Kim, Moon J. ;
Cho, Kyeongjae ;
Wallace, Robert M. .
2D MATERIALS, 2015, 2 (01)
[2]   MoS2 functionalization for ultra-thin atomic layer deposited dielectrics [J].
Azcatl, Angelica ;
McDonnell, Stephen ;
Santosh, K. C. ;
Peng, Xin ;
Dong, Hong ;
Qin, Xiaoye ;
Addou, Rafik ;
Mordi, Greg I. ;
Lu, Ning ;
Kim, Jiyoung ;
Kim, Moon J. ;
Cho, Kyeongjae ;
Wallace, Robert M. .
APPLIED PHYSICS LETTERS, 2014, 104 (11)
[3]   NATURE OF THE USE OF ADVENTITIOUS CARBON AS A BINDING-ENERGY STANDARD [J].
BARR, TL ;
SEAL, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :1239-1246
[4]   HIGH-RESOLUTION MONOCHROMATED XPS OF POLY(METHYL METHACRYLATE) THIN-FILMS ON A CONDUCTING SUBSTRATE [J].
BEAMSON, G ;
BUNN, A ;
BRIGGS, D .
SURFACE AND INTERFACE ANALYSIS, 1991, 17 (02) :105-115
[5]   PRIMARY AND SECONDARY OXYGEN-INDUCED C1S BINDING-ENERGY SHIFTS IN X-RAY PHOTOELECTRON-SPECTROSCOPY OF POLYMERS [J].
BRIGGS, D ;
BEAMSON, G .
ANALYTICAL CHEMISTRY, 1992, 64 (15) :1729-1736
[6]   An XPS study of the surface modification of natural MoS2 following treatment in an RF-oxygen plasma [J].
Brown, NMD ;
Cui, NY ;
McKinley, A .
APPLIED SURFACE SCIENCE, 1998, 134 (1-4) :11-21
[7]   Reducing Extrinsic Performance-Limiting Factors in Graphene Grown by Chemical Vapor Deposition [J].
Chan, Jack ;
Venugopal, Archana ;
Pirkle, Adam ;
McDonnell, Stephen ;
Hinojos, David ;
Magnuson, Carl W. ;
Ruoff, Rodney S. ;
Colombo, Luigi ;
Wallace, Robert M. ;
Vogel, Eric M. .
ACS NANO, 2012, 6 (04) :3224-3229
[8]   UV ozone treatment for improving contact resistance on graphene [J].
Chen, Chung Wei ;
Ren, Fan ;
Chi, Gou-Chung ;
Hung, Sheng-Chun ;
Huang, Y. P. ;
Kim, Jihyun ;
Kravchenko, Ivan I. ;
Pearton, Stephen J. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (06)
[9]  
Freedy K. M., 2017, ECS Transactions, V77, P11, DOI 10.1149/07708.0011ecst
[10]   Surface-Energy-Assisted Perfect Transfer of Centimeter-Scale Mono layer and Few-Layer MoS2 Films onto Arbitrary Substrates [J].
Gurarslan, Alper ;
Yu, Yifei ;
Su, Liqin ;
Yu, Yiling ;
Suarez, Francisco ;
Yao, Shanshan ;
Zhu, Yong ;
Ozturk, Mehmet ;
Zhang, Yong ;
Cao, Linyou .
ACS NANO, 2014, 8 (11) :11522-11528