Oxygen defect processes in silicon and silicon germanium

被引：72

作者：

Chroneos, A. ^{[1
,2
]}

Sgourou, E. N. ^{[3
]}

Londos, C. A. ^{[3
]}

Schwingenschloegl, U. ^{[4
]}

机构：

[1] Coventry Univ, Fac Engn & Comp, Coventry CV1 5FB, W Midlands, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England

[3] Univ Athens, Dept Phys, Solid State Sect, Athens 15784, Greece

[4] KAUST, PSE Div, Thuwal 239556900, Saudi Arabia

来源：

APPLIED PHYSICS REVIEWS | 2015年 / 2卷 / 02期

关键词：

INTRINSIC POINT-DEFECTS; THERMAL DONOR FORMATION; CARBON-RELATED DEFECTS; CZOCHRALSKI SILICON; IRRADIATED SILICON; INTERSTITIAL OXYGEN; RADIATION DEFECTS; ELECTRON-IRRADIATION; CRYSTAL-GROWTH; VACANCY;

D O I：

10.1063/1.4922251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies. (C) 2015 AIP Publishing LLC.

引用

页数：16

共 189 条

[41] Oxygen diffusion in solid oxide fuel cell cathode and electrolyte materials: mechanistic insights from atomistic simulations [J].

Chroneos, Alexander ;

Yildiz, Bilge ;

Tarancon, Albert ;

Parfitt, David ;

Kilner, John A. .

ENERGY & ENVIRONMENTAL SCIENCE, 2011, 4 (08) :2774-2789

[42] Tin doping of silicon for controlling oxygen precipitation and radiation hardness [J].

Claeys, C ;

Simoen, E ;

Neimash, VB ;

Kraitchinskii, A ;

Kras'ko, M ;

Puzenko, O ;

Blondeel, A ;

Clauws, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (12) :G738-G745

[43] Optical gain and stimulated emission in periodic nanopatterned crystalline silicon [J].

Cloutier, SG ;

Kossyrev, PA ;

Xu, J .

NATURE MATERIALS, 2005, 4 (12) :887-891

[44] Interstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si -: art. no. 014109 [J].

Coutinho, J ;

Jones, R ;

Briddon, PR ;

Öberg, S ;

Murin, LL ;

Markevich, VP ;

Lindström, JL .

PHYSICAL REVIEW B, 2002, 65 (01) :1-11

[45] Oxygen and dioxygen centers in Si and Ge:: Density-functional calculations [J].

Coutinho, J ;

Jones, R ;

Briddon, PR ;

Öberg, S .

PHYSICAL REVIEW B, 2000, 62 (16) :10824-10840

[46] Enhanced oxygen diffusion in Czochralski silicon at 450-650 °C [J].

Cui, Can ;

Ma, Xiangyang ;

Yang, Deren .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (05) :1148-1151

[47] Effect of light germanium doping on thermal donors in Czochralski silicon wafers [J].

Cui, Can ;

Yang, Deren ;

Ma, Xiangyang ;

Li, Ming ;

Que, Duanlin .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) :110-113

[48]

David M. L., 2004, P HIGH PURITY SILICO, V2004-05, P395

[49] Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities [J].

David, ML ;

Simoen, E ;

Claeys, C ;

Neimash, V ;

Kras'ko, M ;

Kraitchinskii, A ;

Voytovych, V ;

Kabaldin, A ;

Barbot, JF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (22) :S2255-S2266

[50] A MODEL FOR RADIATION-DAMAGE EFFECTS IN CARBON-DOPED CRYSTALLINE SILICON [J].

DAVIES, G ;

LIGHTOWLERS, EC ;

NEWMAN, RC ;

OATES, AS .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (08) :524-532

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