Oxygen defect processes in silicon and silicon germanium

被引：72

作者：

Chroneos, A. ^{[1
,2
]}

Sgourou, E. N. ^{[3
]}

Londos, C. A. ^{[3
]}

Schwingenschloegl, U. ^{[4
]}

机构：

[1] Coventry Univ, Fac Engn & Comp, Coventry CV1 5FB, W Midlands, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England

[3] Univ Athens, Dept Phys, Solid State Sect, Athens 15784, Greece

[4] KAUST, PSE Div, Thuwal 239556900, Saudi Arabia

来源：

APPLIED PHYSICS REVIEWS | 2015年 / 2卷 / 02期

关键词：

INTRINSIC POINT-DEFECTS; THERMAL DONOR FORMATION; CARBON-RELATED DEFECTS; CZOCHRALSKI SILICON; IRRADIATED SILICON; INTERSTITIAL OXYGEN; RADIATION DEFECTS; ELECTRON-IRRADIATION; CRYSTAL-GROWTH; VACANCY;

D O I：

10.1063/1.4922251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies. (C) 2015 AIP Publishing LLC.

引用

页数：16

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