Fabrication and characterization of circular geometry InGaP/GaAs double heterojunction bipolar transistors

被引：1
|
作者：
Loga, R [1 ]
Vilches, A [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2AZ, England
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 03期
关键词：
D O I：
10.1088/0268-1242/19/3/019
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An MOCVD-grown circular geometry InGaP/GaAs double heterojunetion bipolar transistor with a novel delta(+)-layer composite collector structure was fabricated. A breakdown voltage of 13 V and an offset voltage of just 110 mV were achieved as well as high injection current densities over 3.2 x 105 A cm(-2), which suggest no significant current blocking related to the wide bandgap InGaP collector layers. A cut-off frequency of 35 GHz was measured at a collector current density of 2.4 x 10(5) A cm(-2).
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收藏
页码：404 / 407
页数：4
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