Characteristics of brush plated copper indium telluride films

被引：5
作者：
Murali, K. R. [1 ]
Muthusamy, P. [2 ]
Panneerselvam, A. [3 ]
机构：
[1] CSIR CECRI, ECMS Div, Karaikkudi, Tamil Nadu, India
[2] Pavai Grp Inst, Dept Phys, Paachal, Namakkal, India
[3] Pavai Coll Technol, Dept Phys, Paachal, Namakkal, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 09期
关键词：
14;
D O I：
10.1007/s10854-013-1263-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Copper indium telluride (CIT) films were deposited for the first time by the brush plating technique at different substrate temperatures in the range of 30-80 A degrees C and at a constant deposition current density of 1 mA cm(-2).The Films exhibited single phase CIT. The grain size increased with increase of substrate temperature. Optical band gap of the films varied in the range of 0.98-1.00 eV. Atomic force microscopy studies indicated that the grain size and surface roughness vary from 20 to 50 nm and 1.0 to 1.5 nm, respectively with increase of substrate temperature. The films exhibited photoconductivity.
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收藏
页码：3412 / 3417
页数：6
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