Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

被引：4

作者：

Fontsere, A. ^{[1
]}

Perez-Tomas, A. ^{[1
]}

Placidi, M. ^{[2
]}

Baron, N. ^{[3
,4
]}

Chenot, S. ^{[3
]}

Moreno, J. C. ^{[3
]}

Rennesson, S. ^{[3
]}

Cordier, Y. ^{[3
]}

机构：

[1] CSIC, CNM, IMB, Barcelona 08193, Spain

[2] IREC, Barcelona 08930, Spain

[3] CNRS, CRHEA, F-06560 Valbonne, France

[4] PICOGIGA Int, F-91971 Villejust, France

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 09期

关键词：

HEMTS; GAN; SI;

D O I：

10.1063/1.4794411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN-based power switches are expected to play a key role in uncooled electronics at elevated temperatures. In this paper we explore the thermal activation mechanisms taking place in analogous AlGaN/GaN high electron mobility transistors grown on silicon and sapphire. The on-resistance (alpha = 1.4/1.8 [Si/sapphire]) and saturation current (alpha = 1.5/-1.8) temperature coefficients, the thermal activation energies (E-a = 0.02-0.30/0.30 eV), the drain current on/off ratio (alpha = -1.5-9.1/-9.4), or the thermal impedances (R-th = 76.9/125.8 K/W) were determined and comparatively analyzed by means of physical-based models which include polar-optical phonon scattering, Poole-Frenkel trap assisted and Schottky emission, and the channel self-heating. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794411]

引用

页数：5

共 25 条

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