Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition

被引：99

作者：

Ye, Zhi-Yuan ^{[1
]}

Lu, Hong-Liang ^{[1
]}

Geng, Yang ^{[1
]}

Gu, Yu-Zhu ^{[1
]}

Xie, Zhang-Yi ^{[1
]}

Zhang, Yuan ^{[1
]}

Sun, Qing-Qing ^{[1
]}

Ding, Shi-Jin ^{[1
]}

Zhang, David Wei ^{[1
]}

机构：

[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2013年 / 8卷

基金：

中国国家自然科学基金;

关键词：

TZO films; ALD growth rates; Structure characteristics; Optical properties; Electrical properties; OXIDE THIN-FILMS;

D O I：

10.1186/1556-276X-8-108

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200A degrees C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was then achieved by growing ZnO and TiO2 alternately. A hampered growth mode of ZnO on TiO2 layer was confirmed by comparing the thicknesses measured by spectroscopic ellipsometry with the expected. It was also found that the locations of the (100) diffraction peaks shift towards lower diffraction angles as Ti concentration increased. For all samples, optical transmittance over 80% was obtained in the visible region. The sample with ALD cycle ratio of ZnO/TiO2 being 20 had the lowest resistivity of 8.874 x 10(-4) Omega cm. In addition, carrier concentration of the prepared films underwent an evident increase and then decreased with the increase of Ti doping concentration.

引用

页码：1 / 6

页数：6

共 23 条

[1] Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films [J].

Banerjee, Parag ;

Lee, Won-Jae ;

Bae, Ki-Ryeol ;

Lee, Sang Bok ;

Rubloff, Gary W. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (04)

[2] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[3] Violet and blue-green luminescence from Ti-doped ZnO films deposited by RF reactive magnetron sputtering [J].

Chen, Haixia ;

Ding, Jijun ;

Ma, Shuyi .

SUPERLATTICES AND MICROSTRUCTURES, 2011, 49 (02) :176-182

[4] An EXAFS and XANES study of MBE grown Cu-doped ZnO [J].

Fons, P ;

Yamada, A ;

Iwata, K ;

Matsubara, K ;

Niki, S ;

Nakahara, K ;

Takasu, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 199 :190-194

[5] Atomic Layer Deposition: An Overview [J].

George, Steven M. .

CHEMICAL REVIEWS, 2010, 110 (01) :111-131

[6]

Jagadish C, 2006, ZINC OXIDE BULK, THIN FILMS AND NANOSTRUCTURES: PROCESSING, PROPERTIES AND APPLICATIONS, P1

[7]

Jiles D., 1994, Introduction to the Electronic Properties of Materials

[8] ON THE USE OF ZINC ACETATE AS A NOVEL PRECURSOR FOR THE DEPOSITION OF ZNO BY LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KHAN, OFZ ;

OBRIEN, P .

THIN SOLID FILMS, 1989, 173 (01) :95-97

[9] Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices [J].

Kim, H ;

Gilmore, CM ;

Piqué, A ;

Horwitz, JS ;

Mattoussi, H ;

Murata, H ;

Kafafi, ZH ;

Chrisey, DB .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6451-6461

[10] Applications and processing of transparent conducting oxides [J].

Lewis, BG ;

Paine, DC .

MRS BULLETIN, 2000, 25 (08) :22-27

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