A Doherty Power Amplifier Design Method for Improved Efficiency and Linearity

被引:78
作者
Hallberg, William [1 ]
Ozen, Mustafa [1 ,2 ]
Gustafsson, David [3 ]
Buisman, Koen [1 ]
Fager, Christian [1 ]
机构
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
[2] Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USA
[3] Ericsson AB, SE-41756 Gothenburg, Sweden
关键词
AM/AM; AM/PM; Doherty power amplifier (DPA); energy efficiency; gallium nitride (GaN); high electron mobility transistors; long term evolution (LTE); power amplifier (PA);
D O I
10.1109/TMTT.2016.2617882
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel Doherty power amplifier (PA) design method enabling high efficiency and high linearity simultaneously is proposed. The output combiner network is treated as a black box, and its parameters, together with the input phase delay, are solved based on given transistor characteristics and design requirements. This opens for new PA solutions with nonconventional Doherty behavior. The increased design space enables new tradeoffs in Doherty PA designs, including solutions with both high efficiency and high linearity simultaneously. A method utilizing the new design space is developed. For verification, a 20-W 2.14-GHz symmetrical gallium nitride high electron mobility transistors Doherty PA is fabricated and measured. The PA obtains an average power added efficiency of 40% and an adjacent power leakage ratio of -41 dBc without any linearization for an 8.6-dB peak to average power ratio 10-MHz-long term evolution signal, at an average output power of 35.5 dBm.
引用
收藏
页码:4491 / 4504
页数:14
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