An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers

被引：0

作者：

Sun, Hongzhi ^{[1
]}

Maarouf, Fares ^{[1
]}

Fang, Deyou ^{[1
]}

Jia, Kemiao ^{[1
]}

Xie, Huikai ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1-3 | 2008年

关键词：

CMOS-MEMS accelerometer; three-axis accelerometer; dual-chopper amplifier; low power; low noise;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports an improved low-power low-noise dual-chopper amplifier (DCA) for capacitive CMOS-MEMS accelerometers. The new DCA employs an on-chip band-gap voltage reference to reduce the number of bonding pads and the complexity of the external circuits. The temperature drifting of the first-stage gain is reduced by using PMOS instead of NMOS as an active load. A prototype DCA with a three-axis accelerometer has been fabricated using the TSMC 0.35 mu m technology. The number of required bonding pads is reduced from 21 to 14, and the temperature sensitivity is reduced from 1.2 x 10(-3)/degrees C to 5.4 x 10(-4)degrees C.

引用

页码：1075 / 1080

页数：6

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