Structural and electronic properties of Si1-x Gex binary semiconducting alloys under the effect of temperature and pressure

Based on the empirical pseudo-potential method which incorporates compositional disorder as an effective potential, the band structure of Si1 - x Ge (x) alloy are calculated for different alloy composition x. The effect of temperature and pressure on the electronic band structure of the considered alloy has been studied. Monotonic decreasing and increasing functions are obtained for the temperature and pressure dependent form factors respectively. Some physical quantities as band gaps, bowing parameters, and the refractive index of the considered alloy with different Ge concentration and under the effect of temperature and pressure are calculated. The results obtained are found in good agreement with the experimental and published data.