A new defective 19-electron TiPtSb half-Heusler thermoelectric compound with heavy band and low lattice thermal conductivity

被引：27
作者：
Fang, T. [1 ]
Xia, K. [1 ]
Nan, P. [2 ,3 ]
Ge, B. [2 ,3 ]
Zhao, X. [1 ]
Zhu, T. [1 ]
机构：
[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Anhui, Peoples R China
[3] Anhui Univ, Minist Educ, Key Lab Struct & Funct Regulat Hybrid Mat, Hefei 230601, Anhui, Peoples R China
来源：
MATERIALS TODAY PHYSICS | 2020年 / 13卷
基金：
中国国家自然科学基金;
关键词：
Thermoelectric materials; Cation-deficient; Nominal 19-electron half-Heusler; Band effective mass; Low thermal conductivity; PERFORMANCE; FIGURE; ENHANCEMENT; MERIT; RULE; GAP; HF;
D O I：
10.1016/j.mtphys.2020.100200
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Compared with widely studied 18-electron half-Heusler (HH) thermoelectric (TE) materials, cation-deficient 19-electron HH compounds have also been recently demonstrated to possess excellent TE performance, exhibiting high potential for TE application. Here, a new defective 19-electron HH compound Ti1-xPtSb is developed with high density-of-state effective mass and low lattice thermal conductivity. The former results from the band degeneracy and high band effective mass, and the latter results from the enhanced phonon scattering by substantial intrinsic Ti vacancies. The optimized carrier concentration, combined with the low lattice thermal conductivity, contributes to a maximum zT of 0.7 in pure-phase Ti1-xPtSb (x = 0.14-0.18) samples, which is about 50% higher than that of the nominal TiPtSb sample, indicating that n-type Ti1-xPtSb HH compounds are promising TE materials. (C) 2020 Elsevier Ltd. All rights reserved.
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页数：8
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