A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2

被引：219

作者：

Jin, Youngjo ^{[1
,2
]}

Keum, Dong Hoon ^{[1
,2
]}

An, Sung-Jin ^{[1
,2
]}

Kim, Joonggyu ^{[1
,2
]}

Lee, Hyun Seok ^{[1
,2
,3
]}

Hee, Young ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Inst Basic Sci, Ctr Integrated Nanostruct Phys CINAP, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 37期

关键词：

FIELD-EFFECT TRANSISTORS; MONOLAYER MOS2; PHOTOCURRENT; MOLYBDENUM; GENERATION;

D O I：

10.1002/adma.201502278

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of approximate to 1.0 and a high external quantum efficiency (approximate to 52%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.

引用

页码：5534 / 5540

页数：7

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