Effects of the surface compositions on electrical properties of Pb(Zr,Ti)O3 thin films

Pb(Zr,Ti)O-3 (PZT) thin films were prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition (CSD) method and the surface compositions of PZT films were changed by deposition of very thin Zr,Ti oxide using Metallorganic Chemical Vapor Deposition (MOCVD) method. The effects of the surface compositions on electrical properties of PZT thin films were studied. Surface morphology and surface composition changed with deposition time of Zr,Ti oxide. After surface modification with deposition of Zr,Ti oxide for 30s, dielectric constant of PZT thin films increased about 20 %, up to maximum. The dielectric constant and dielectric loss also changed with deposition time of Zr,Ti oxide. The hysteresis loops of PZT thin films can be improved by surface modification. In comparison with the films without surface modification, the remnant polarization of the PZT thin films with surface modification increased, and the coercive field changed little.