Non ideal current in SiGe/Si HBT

被引：0

作者：

Xu, C ^{[1
]}

Zou, DS ^{[1
]}

Chen, JX ^{[1
]}

Shi, C ^{[1
]}

Deng, J ^{[1
]}

Gao, G ^{[1
]}

Shen, GD ^{[1
]}

机构：

[1] Beijing Polytech Univ, Beijing Optoelect Technol Lab, Coll Elect Engn, Beijing 100022, Peoples R China

来源：

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The non-ideal current in the Ib and Ic of the SiGe/Si HBT were studied. At low temperature it shown tunnel characteristics. From C-V and double crystal X-ray diffraction measurements, it was confirmed that this phenomena was related to the crystal quality in the base, emitter and their interface, but not related to the SiO-Si interface. The non-ideal current in Ic cannot be explained by the conventional drift-diffusion theory and is believed to be relevant to electrons tunneling from emitter or its depleted region to collector by means of intermediate trap state in the base. However DLTS measurements shown that the phenomena have nothing to do with the deep levels in the emitter and collector.

引用

页码：631 / 633

页数：3

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