Backside laser testing of ICs for SET sensitivity evaluation

被引：60
作者：
Lewis, D
Pouget, V
Beaudoin, F
Perdu, P
Lapuyade, H
Fouillat, P
Touboul, A
机构：
[1] Univ Bordeaux 1, Lab IXL, F-33405 Talence, France
[2] CNES, AE, EQE, AQ,DTS, F-31401 Toulouse 4, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 06期
关键词：
backside laser testing; single-event effect (SEE); sensitivity of linear ICs; single-event transient (SET) mapping;
D O I：
10.1109/23.983195
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new experimental approach combining backside laser testing and analog mapping is presented. A new technique for integrated circuits (ICs) backside preparation by laser ablation is evaluated. The methodology is applied to the study of single-event transient (SET) sensitivity on a linear IC.
引用
收藏
页码：2193 / 2201
页数：9
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