Global analysis of effects of magnetic field configuration on melt-crystal interface shape and melt flow in CZ-Si crystal growth

被引：12
作者：
Liu, Lijun [1 ]
Kitashima, Tomonori [1 ]
Kakimoto, Koichi [1 ]
机构：
[1] Kyushu Univ, Appl Mech Res Inst, Kasuga, Fukuoka 8168580, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期
关键词：
Computer simulation; Magnetic fields; Magnetic field-assisted Czochralski method; Semiconducting silicon;
D O I：
10.1016/j.jcrysgro.2004.11.292
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In order to clarify the effects of configuration of magnetic field on the melt-crystal interface shape and the melt convection in a crucible, a set of numerical computations was conducted for a Czochralski furnace for silicon crystals of small diameter by global modeling. Under different combinations of crucible/crystal rotation rates, numerical comparisons were carried out for four configurations of magnetic field: a transverse magnetic field, a vertical magnetic field and two types of cusp-shaped magnetic fields. The computations revealed that each magnetic-field configuration has its own feature in affecting the melt convection and the melt-crystal interface shape when combining with variation in crystal/crucible rotation rates. (C) 2004 Elsevier B. V. All rights reserved.
引用
收藏
页码：E2135 / E2139
页数：5
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