Currently, TiO2 on a fluorine-doped tin oxide substrate is the most commonly used type of photoelectrode in high-efficiency quantum dot-sensitized solar cells (QDSSCs). The power conversion efficiency (PCE) of TiO2 photoelectrodes is limited because of higher charge recombination and lower QD loading on the TiO2 film. This article describes the effect of a TiO2 compact layer on a TiO2 film to enhance the performance of QDSSCs. TiO2 nanoparticles were coated on an FTO substrate by the doctor-blade method and then the TiO2 compact layer was successfully fabricated on the surface of the nanoparticles by a simple hydrothermal method. QDSSCs were made using these films as photoelectrodes with NiS counter electrodes. Under one sun illumination (AM 1.5 G, 100 mW cm(-2)), the QDSSCs showed PCEs of 2.19 and 2.93% for TCL1 and TCL2 based photoelectrodes, which are higher than the 1.33% value obtained with bare TiO2. The compact-layer-coated film electrodes provide a lower charge-transfer resistance and higher light harvesting. The compact layer on the TiO2 film is a more efficient photocatalyst than pure TiO2 film and physically separates the injected electrons in the TiO2 from the positively charged CdS QD/electrolyte.
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E China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China
Suzhou Univ, Sch Mech & Elect Engn, Suzhou 234000, Anhui, Peoples R ChinaE China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China
Yang, Jie
Pan, Likun
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E China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China
Pan, Likun
Zhu, Guang
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E China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China
Zhu, Guang
Liu, Xinjuan
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E China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China
Liu, Xinjuan
Sun, Hengchao
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E China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China
Sun, Hengchao
Sun, Zhuo
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E China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China
机构:
China Univ Min & Technol, Xuzhou 221116, Peoples R China
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaChina Univ Min & Technol, Xuzhou 221116, Peoples R China
Gu Xiuquan
Song Duanming
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China Univ Min & Technol, Xuzhou 221116, Peoples R ChinaChina Univ Min & Technol, Xuzhou 221116, Peoples R China
Song Duanming
Zhao Yulong
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China Univ Min & Technol, Xuzhou 221116, Peoples R ChinaChina Univ Min & Technol, Xuzhou 221116, Peoples R China
Zhao Yulong
Qiang Yinghuai
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China Univ Min & Technol, Xuzhou 221116, Peoples R ChinaChina Univ Min & Technol, Xuzhou 221116, Peoples R China
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Hanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South KoreaHanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
Jung, Eun Sun
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Basit, Muhammad Abdul
Abbas, Muhammad Awais
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Hanyang Univ, Nanosensor Res Inst, Ansan 15588, South KoreaHanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
Abbas, Muhammad Awais
Ali, Ijaz
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Hanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South KoreaHanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
Ali, Ijaz
Kim, Dae Woong
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Hanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South KoreaHanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
Kim, Dae Woong
Park, Young Min
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Korea Inst Ind Technol KITECH, Adv Funct Technol R&D Grp, Incheon 21999, South KoreaHanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
Park, Young Min
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Bang, Jin Ho
Park, Tae Joo
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Hanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
Hanyang Univ, Nanosensor Res Inst, Ansan 15588, South KoreaHanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
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Faculty of Physics, Dong Thap University, Dong Thap Province
2. University of Science, Viet Nam National University, Ho Chi Minh City
3. Viet Faculty of Physics, Dong Thap University, Dong Thap Province
2. University of Science, Viet Nam National University, Ho Chi Minh City
3. Viet
Tung Ha Thanh
Quang Vinh Lam
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机构:Faculty of Physics, Dong Thap University, Dong Thap Province
2. University of Science, Viet Nam National University, Ho Chi Minh City
3. Viet
Quang Vinh Lam
Thai Hoang Nguyen
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机构:Faculty of Physics, Dong Thap University, Dong Thap Province
2. University of Science, Viet Nam National University, Ho Chi Minh City
3. Viet
Thai Hoang Nguyen
Thanh Dat Huynh
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机构:Faculty of Physics, Dong Thap University, Dong Thap Province
2. University of Science, Viet Nam National University, Ho Chi Minh City
3. Viet
机构:
Hanyang Univ, Dept Adv Mat Engn, Ansan 15588, South KoreaHanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
Abbas, Muhammad Awais
Jung, Eun Sun
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Hanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South KoreaHanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
Jung, Eun Sun
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Bang, Jin Ho
Park, Tae Joo
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Hanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
Hanyang Univ, Dept Adv Mat Engn, Ansan 15588, South KoreaHanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea