In situ study of the high pressure high-temperature stability field of TaN and of the compressibilities of θ-TaN and TaON

被引：15

作者：

Friedrich, A. ^{[1
]}

Morgenroth, W. ^{[1
]}

Bayarjargal, L. ^{[1
]}

Juarez-Arellano, E. A. ^{[2
]}

Winkler, B. ^{[1
]}

Konopkova, Z. ^{[3
]}

机构：

[1] Goethe Univ Frankfurt, Abt Kristallog, Inst Geowissensch, D-60438 Frankfurt, Germany

[2] Univ Papaloapan, Inst Quim Aplicada, Tuxtepec 68301, Oaxaca, Mexico

[3] Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany

来源：

HIGH PRESSURE RESEARCH | 2013年 / 33卷 / 03期

关键词：

high pressure; tantalum nitride; tantalum oxynitride; X-ray diffraction; laser-heated diamond anvil cell; phase stability; TANTALUM NITRIDE;

D O I：

10.1080/08957959.2013.813943

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The high pressure high-temperature stability of tantalum mononitrides was investigated at 8-23.5GPa and 1400-3500K by in situ powder synchrotron X-ray diffraction using the laser-heated diamond anvil cell and E-TaN as starting material. The transformation from E-TaN to ?-TaN was observed and ?-TaN was confirmed as the stable high-(p, T) tantalum mononitride. At temperatures above 3000K at 16-23.5GPa, the formation of a novel quenchable high pressure high-temperature phase was observed. Under nitrogen excess E-TaN reacted with nitrogen to the high-(p, T) phase -Ta2N3 as the main stable phase at 8-13GPa and about 2000K. This behaviour is similar to the reaction of pure Ta with nitrogen at high-(p, T) conditions. In addition, we have determined the bulk moduli of ?-TaN (B=360(15)GPa), which is less compressible than E-TaN and -Ta2N3, and of TaON (B=267(8)GPa).

引用

页码：633 / 641

页数：9

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