Maximum Junction Temperatures of SiC Power Devices

被引：87

作者：

Sheng, Kuang ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 02期

关键词：

BJT; high temperature; JFET; MOSFET; power device; Schottky barrier diodes (SBD); SiC;

D O I：

10.1109/TED.2008.2010605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a detailed physical analysis on the junction temperatures, thermal stabilities, and thermal runaway effects of self-heating unipolar SiC power devices. Results reveal that the risk of thermal runaway could limit the usable junction temperature of these SiC devices to substantially lower than 200 degrees C, regardless of the device size and the cooling method used.

引用

页码：337 / 342

页数：6

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