Control of the Cation Stoichiometry in the Multiferroic BiFeO3 Thin Films

被引：4

作者：

Kartavtseva, M. S. ^{[1
,2
]}

Gorbenko, O. Yu. ^{[1
]}

Kaul, A. R. ^{[1
]}

Fusil, S. ^{[2
]}

Barthelemy, A. ^{[2
]}

Bouzehouane, K. ^{[2
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119992, Russia

[2] CNRS, Unite Mixte Phys Thales, F-91767 Palaiseau, France

来源：

FERROELECTRICS | 2008年 / 374卷

关键词：

Piezoresponse Force Microscopy; isopiestic annealing; multiferroics; MOCVD;

D O I：

10.1080/00150190802424728

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The epitaxial BiFeO3 films on different substrates were prepared by metal organic chemical vapor deposition (MOCVD). The ferroelectric properties of the films were controlled by Piezoresponse Force Microscopy (PFM). The isopiestic post-annealing of the film inside the ceramic container made of BiFeO3 and Bi2Fe4O9 phase mixture was proposed to control the film stoichiometry.

引用

页码：164 / 169

页数：6

共 12 条

[1] Destruction of spin cycloid in (111)c-oriented BiFeO3 thin films by epitiaxial constraint:: Enhanced polarization and release of latent magnetization -: art. no. 032511 [J].

Bai, FM ;

Wang, JL ;

Wuttig, M ;

Li, JF ;

Wang, NG ;

Pyatakov, AP ;

Zvezdin, AK ;

Cross, LE ;

Viehland, D .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

[2] Combining half-metals and multiferroics into epitaxial heterostructures for spintronics [J].

Béa, H ;

Bibes, M ;

Sirena, M ;

Herranz, G ;

Bouzehouane, K ;

Jacquet, E ;

Fusil, S ;

Paruch, P ;

Dawber, M ;

Contour, JP ;

Barthélémy, A .

APPLIED PHYSICS LETTERS, 2006, 88 (06)

[3] Influence of parasitic phases on the properties of BiFeO3 epitaxial thin films -: art. no. 072508 [J].

Béa, H ;

Bibes, M ;

Barthélémy, A ;

Bouzehouane, K ;

Jacquet, E ;

Khodan, A ;

Contour, JP ;

Fusil, S ;

Wyczisk, F ;

Forget, A ;

Lebeugle, D ;

Colson, D ;

Viret, M .

APPLIED PHYSICS LETTERS, 2005, 87 (07)

[4] Cation and oxygen nonstoichiometry in R-Mn-O (R = La, Nd) bulk samples and thin films [J].

Bosak, AA ;

Gorbenko, OY ;

Kaul, AR ;

Graboy, IE ;

Dubourdieu, C ;

Senateur, JP ;

Zandbergen, HW .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 211 (1-3) :61-66

[5] BiFeO3 thin films prepared by MOCVD [J].

Kartavtseva, M. S. ;

Gorbenko, O. Yu. ;

Kaul, A. R. ;

Akbashev, A. R. ;

Murzina, T. V. ;

Fusil, S. ;

Barthelemy, A. ;

Pailloux, F. .

SURFACE & COATINGS TECHNOLOGY, 2007, 201 (22-23) :9149-9153

[6] BiFeO3 thin films prepared using metalorganic chemical vapor deposition [J].

Kartavtseva, M. S. ;

Gorbenko, O. Yu. ;

Kaul, A. R. ;

Murzina, T. V. ;

Savinov, S. A. ;

Barthelemy, A. .

THIN SOLID FILMS, 2007, 515 (16) :6416-6421

[7] Design considerations for MRAM [J].

Maffitt, TM ;

DeBrosse, JK ;

Gabric, JA ;

Gow, ET ;

Lamorey, MC ;

Parenteau, JS ;

Willmott, DR ;

Wood, MA ;

Gallagher, WJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2006, 50 (01) :25-39

[8] Crystal structure and electrical properties of epitaxial BiFeO3 thin films grown by metal organic chemical vapor deposition [J].

Ueno, R ;

Okaura, S ;

Funakubo, H ;

Saito, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (37-41) :L1231-L1233

[9] Epitaxial BiFeO3 multiferroic thin film heterostructures [J].

Wang, J ;

Neaton, JB ;

Zheng, H ;

Nagarajan, V ;

Ogale, SB ;

Liu, B ;

Viehland, D ;

Vaithyanathan, V ;

Schlom, DG ;

Waghmare, UV ;

Spaldin, NA ;

Rabe, KM ;

Wuttig, M ;

Ramesh, R .

SCIENCE, 2003, 299 (5613) :1719-1722

[10] Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO3 films for memory applications -: art. no. 102903 [J].

Yang, SY ;

Zavaliche, F ;

Mohaddes-Ardabili, L ;

Vaithyanathan, V ;

Schlom, DG ;

Lee, YJ ;

Chu, YH ;

Cruz, MP ;

Zhan, Q ;

Zhao, T ;

Ramesh, R .

APPLIED PHYSICS LETTERS, 2005, 87 (10)

← 1 2 →