Phase evolution in zirconia thin films prepared by pulsed laser deposition

被引:16
作者
Mishra, Maneesha [1 ]
Kuppusami, P. [1 ]
Singh, Akash [1 ]
Ramya, S. [2 ]
Sivasubramanian, V. [3 ]
Mohandas, E. [1 ]
机构
[1] Indira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
[2] Indira Gandhi Ctr Atom Res, Corros Sci & Technol Grp, Kalpakkam 603102, Tamil Nadu, India
[3] Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
关键词
Zirconia; Pulsed laser deposition; Phase transformation; Crystallite size; Optical properties; CHEMICAL VAPOR-DEPOSITION; OXYGEN PARTIAL-PRESSURE; DOPED CUBIC ZIRCONIA; OXIDE-FILMS; OPTICAL-PROPERTIES; SUBSTRATE-TEMPERATURE; ELECTRICAL-PROPERTIES; STABILIZED ZIRCONIA; MONOCLINIC ZIRCONIA; TETRAGONAL ZIRCONIA;
D O I
10.1016/j.apsusc.2012.01.160
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zirconia thin films were deposited on silicon (1 0 0) and quartz substrates using pulsed laser deposition. Phase formation in zirconia films was monitored as a function of substrate temperature (473-973 K) and oxygen partial pressure (0.001-1 Pa). Volume fraction of tetragonal zirconia is determined from X-ray diffraction and Raman analysis. Tetragonal volume fraction of zirconia films varies from 10 to 76% for different substrate temperature and oxygen partial pressure. Zirconia films show a good transparency in the visible region, except for the films deposited at 473 K and at 0.002 Pa. The band gap values and refractive index of the films are discussed in relation with the microstructure and phase composition of the zirconia films as well as with 8 mol% yttria stabilised zirconia films. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码:5157 / 5165
页数:9
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